Browsing by Author "Osburn, Carl, Dr."
Now showing 1 - 20 of 21
- Results Per Page
- Sort Options
Item Integrated circuit technology and fabrication: lecture 14(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture looks at diagnostic techniques and measurements - goes into describing basic materials analysis techniques, examination of the principles of beam/ material interaction; discusses topics such as generic analytical tools, optical analytical techniques, electron microscope techniques, and checmical analysis with electrons and X-Rays.Item Integrated circuit technology and fabrication: lecture 15(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Etching.Item Integrated circuit technology and fabrication: lecture 18(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The video presentation is looking at basic device operations and fabrication. By the end of this video you should be able to describe basic semiconductor physics and electrical elements devices, P-N junction, Dopants, MOS, IG FET transistor, Bipolar transistor; gives introduction to device structures and fabrications process; provide visualization of the layers in devices and how they fit together; and illustration of the trends in IC manufacturing.Item Integrated circuit technology and fabrication: lecture 21(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture introduces students to VLSI (MOS) device design, specifically providing description of the device design criteria/ trade-offs for VLSI devices; and provides illustrations of the coupling between device design and process design.Item Integrated circuit technology and fabrication: lecture 22(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.This video talks about MOS characterization and annealing - in detail it discusses electrical defects found in MOS devices, the development of C-V characterization technique, the effects of processing on electrical defects, and optimal annealing considerations.Item Integrated circuit technology and fabrication: lecture 28(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.This lecture is about yield loss mechanisms - the instructor discusses topics such as a) processing problems, b) circuit design, and c) random defects.Item Integrated circuit technology and fabrication: lecture 3(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Crystal Growth and Water PreparationItem Integrated circuit technology and fabrication: lesson 10(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture covers Ion ImplantationItem Integrated circuit technology and fabrication: lesson 10(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about DiffusionItem Integrated circuit technology and fabrication: lesson 11(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture hanldles Ion Implantation, Molecular implants and High Energy ImplantsItem Integrated circuit technology and fabrication: lesson 13(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Photo lithography and Coherence of light source.Item Integrated circuit technology and fabrication: lesson 16(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Dry Etching and Plasma EtchingItem Integrated circuit technology and fabrication: lesson 17(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Process Integration. Yield / reliability loss in non-Planar Structures. Applications for Planarization.Item Integrated circuit technology and fabrication: lesson 18(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.This video presents process integration for MOS devices. It looks at the evolution of processes, including topics like: metal gate, poly SiGate, Locos isolation (Ion implanted devices), depletion mode (Multiple V1), buried contact, Poly-Si loads, Double poly-Si, CMOS (N-Well., P-Well, Twin Tub), Stacked or trench capacitor, and BiMOS.Item Integrated circuit technology and fabrication: lesson 26(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Chemical Analysis with Electrons and X-rays based on Absorption and Emission - Electron energy loss. Electron Microprose. Auger Electron Spectroscopy. Chemical Analysis with Ion Particle Beams.Item Integrated circuit technology and fabrication: lesson 4(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about GaAs Wafer Orientations and Chemical Vapor Deposition CVD.Item Integrated circuit technology and fabrication: lesson 5(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Chemical Vapor Deposition : Chemical reactions for Silicon EpitaxyItem Integrated circuit technology and fabrication: lesson 6(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture continues to talk about Chemical Vapour Deposition and Thermal Oxidation of SiliconItem Integrated circuit technology and fabrication: lesson 7(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Thermal Oxidation of SiliconItem Integrated circuit technology and fabrication: lesson 8(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.The lecture is about Diffusion