Integrated circuit technology and fabrication: lesson 18
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Date
1996
Journal Title
Journal ISSN
Volume Title
Publisher
North Carolina University
Abstract
This video presents process integration for MOS devices. It looks at the evolution of processes, including topics like: metal gate, poly SiGate, Locos isolation (Ion implanted devices), depletion mode (Multiple V1), buried contact, Poly-Si loads, Double poly-Si, CMOS (N-Well., P-Well, Twin Tub), Stacked or trench capacitor, and BiMOS.
Description
Keywords
MOS devices, Trench capacitor, BiMOS, Poly SiGate,
Citation
Osburn, C. & Ruggles, G.A. (1996). Integrated circuit technology and fabrication lecture 18, North Carolina University, United States.