Integrated circuit technology and fabrication: lecture 22
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Date
1996
Journal Title
Journal ISSN
Volume Title
Publisher
North Carolina University
Abstract
This video talks about MOS characterization and annealing - in detail it discusses electrical defects found in MOS devices, the development of C-V characterization technique, the effects of processing on electrical defects, and optimal annealing considerations.
Description
Keywords
MOS devices, C-V characterization technique, Electrical defects, Optimal annealing considerations
Citation
Osburn, C. & Ruggles, G.A. (1996). Integrated circuit technology and fabrication lecture 21, North Carolina University, United States.