Integrated circuit technology and fabrication: lesson 18
| dc.contributor.author | Osburn, Carl, Dr. | |
| dc.contributor.author | Ruggles, Gary A, Dr. | |
| dc.date.accessioned | 2018-10-15T13:31:18Z | |
| dc.date.available | 2018-10-15T13:31:18Z | |
| dc.date.copyright | 1996 | |
| dc.date.issued | 1996 | |
| dc.description | en_US | |
| dc.description.abstract | This video presents process integration for MOS devices. It looks at the evolution of processes, including topics like: metal gate, poly SiGate, Locos isolation (Ion implanted devices), depletion mode (Multiple V1), buried contact, Poly-Si loads, Double poly-Si, CMOS (N-Well., P-Well, Twin Tub), Stacked or trench capacitor, and BiMOS. | en_US |
| dc.description.sponsorship | Uganda Institute of Information and Communications Technology | en_US |
| dc.identifier.citation | Osburn, C. & Ruggles, G.A. (1996). Integrated circuit technology and fabrication lecture 18, North Carolina University, United States. | en_US |
| dc.identifier.uri | http://196.43.179.3:8080/xmlui/handle/123456789/156 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | North Carolina University | en_US |
| dc.subject | MOS devices | en_US |
| dc.subject | Trench capacitor | en_US |
| dc.subject | BiMOS | en_US |
| dc.subject | Poly SiGate, | en_US |
| dc.title | Integrated circuit technology and fabrication: lesson 18 | en_US |
| dc.type | Video | en_US |
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