(North Carolina University, 1996) Osburn, Carl, Dr.; Ruggles, Gary A, Dr.
This video presents process integration for MOS devices. It looks at the evolution of processes, including topics like: metal gate, poly SiGate, Locos isolation (Ion implanted devices), depletion mode (Multiple V1), buried contact, Poly-Si loads, Double poly-Si, CMOS (N-Well., P-Well, Twin Tub), Stacked or trench capacitor, and BiMOS.
