Osburn, Carl Dr.Ruggles, Gary Dr.2018-11-162018-11-1619961996http://196.43.179.3:8080/xmlui/handle/123456789/1331The presentation is a bout MOS characterization and annealing. Objectives covered include; 1.Diiscussion of electrical defects found in MOS devices 2.Development of C.V characterization technique 3.Discussion of effects of processing on electrical defects 4.Optimal annealing considerations.en-USVideo