Osburn, Carl, Dr.Ruggles, Gary A, Dr.2018-10-152018-10-1519961996Osburn, C. & Ruggles, G.A. (1996). Integrated circuit technology and fabrication lecture 18, North Carolina University, United States.http://196.43.179.3:8080/xmlui/handle/123456789/156This video presents process integration for MOS devices. It looks at the evolution of processes, including topics like: metal gate, poly SiGate, Locos isolation (Ion implanted devices), depletion mode (Multiple V1), buried contact, Poly-Si loads, Double poly-Si, CMOS (N-Well., P-Well, Twin Tub), Stacked or trench capacitor, and BiMOS.en-USMOS devicesTrench capacitorBiMOSPoly SiGate,Video