Osburn, Carl Dr.Ruggles, Gary Dr.2018-11-162018-11-1619961996http://196.43.179.3:8080/xmlui/handle/123456789/1301The lecture is about MOS characterization and annealing. It covers the following objectives; 1.Discussion of electrical defects found in MOS devices 2.Development of C-V characterization technique 3.Discussion of effects of processing and electrical defects 4.Optimal annealing considerationsen-USVideo